TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

doi:10.1016/j.cjche.2018.08.004

Abstract

Abstract: Chemical inhomogeneity of chemical vapor deposition (CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21% improvement in the standard deviation 2D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the 0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio (low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.

Key words: Graphene quality, Chemical vapor deposition (CVD), Multi-response optimization, TOPSIS based Taguchi method, Statistical comparison

摘要： Chemical inhomogeneity of chemical vapor deposition (CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21% improvement in the standard deviation 2D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the 0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio (low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.

关键词: Graphene quality, Chemical vapor deposition (CVD), Multi-response optimization, TOPSIS based Taguchi method, Statistical comparison

Barış Şimşek. TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity[J]. Chin.J.Chem.Eng., 2019, 27(3): 685-694.

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