SCI和EI收录∣中国化工学会会刊

Chinese Journal of Chemical Engineering ›› 2023, Vol. 64 ›› Issue (12): 241-249.DOI: 10.1016/j.cjche.2023.06.024

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Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

Manlin Yuan, Xin Lu, Xiaoyun Ma, Hao Lin, Angui Lu, Liyan Shao, Zhong Xin   

  1. State Key Laboratory of Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, China
  • Received:2023-03-16 Revised:2023-06-06 Online:2024-02-05 Published:2023-12-28
  • Contact: Zhong Xin,E-mail:xzh@ecust.edu.cn
  • Supported by:
    This work was supported by the Innovation Program of the Shanghai Municipal Education Commission (2019-01-07-00-02-E00061) and the Shanghai Municipal Science and Technology Commission (21520761100).

Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

Manlin Yuan, Xin Lu, Xiaoyun Ma, Hao Lin, Angui Lu, Liyan Shao, Zhong Xin   

  1. State Key Laboratory of Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, China
  • 通讯作者: Zhong Xin,E-mail:xzh@ecust.edu.cn
  • 基金资助:
    This work was supported by the Innovation Program of the Shanghai Municipal Education Commission (2019-01-07-00-02-E00061) and the Shanghai Municipal Science and Technology Commission (21520761100).

Abstract: The evolution of electronic communication technology raises higher requirements for low dielectric constant (low-k) materials. For this, a benzoxazine functional organosilicon (HP-aptes) with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol–gel method. Then, a series of polybenzoxazine composites (PPHP) were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer (P-aptmds) and HP-aptes. The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites, which endowed the composites with enhanced low-k properties. When the content of HP-aptes is 30% (mass), the crosslinking density was 2.05×10-3 mol·cm-3, while that of PP-aptmds was 3.31×10-3 mol·cm-3. In addition, the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056, respectively.

Key words: Polybenzoxazine, Organosilicon, Composite, Dielectric constant

摘要: The evolution of electronic communication technology raises higher requirements for low dielectric constant (low-k) materials. For this, a benzoxazine functional organosilicon (HP-aptes) with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol–gel method. Then, a series of polybenzoxazine composites (PPHP) were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer (P-aptmds) and HP-aptes. The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites, which endowed the composites with enhanced low-k properties. When the content of HP-aptes is 30% (mass), the crosslinking density was 2.05×10-3 mol·cm-3, while that of PP-aptmds was 3.31×10-3 mol·cm-3. In addition, the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056, respectively.

关键词: Polybenzoxazine, Organosilicon, Composite, Dielectric constant