TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

doi:10.1016/j.cjche.2018.08.004

Chinese Journal of Chemical Engineering ›› 2019, Vol. 27 ›› Issue (3): 685-694.DOI: 10.1016/j.cjche.2018.08.004

• Materials and Product Engineering • 上一篇下一篇

TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

Bar?? ?im?ek

Department of Chemical Engineering, Faculty of Engineering, Çank?r? Karatekin University, Uluyaz? Kampüsü 18200, Merkez, Çank?r?, Turkey

收稿日期:2018-04-12 修回日期:2018-06-26 出版日期:2019-03-28 发布日期:2019-04-25
通讯作者: Barış Şimşek,E-mail address:barissimsek@karatekin.edu.tr
基金资助:
Supported by the Scientific Research Project of Çank?r? Karatekin University (MF200217B05) and the Scientific Research Project Management Unit of Çank?r? Karatekin University (ÇAKÜ-BAP).

TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

Bar?? ?im?ek

Department of Chemical Engineering, Faculty of Engineering, Çank?r? Karatekin University, Uluyaz? Kampüsü 18200, Merkez, Çank?r?, Turkey

Received:2018-04-12 Revised:2018-06-26 Online:2019-03-28 Published:2019-04-25
Contact: Barış Şimşek,E-mail address:barissimsek@karatekin.edu.tr
Supported by:
Supported by the Scientific Research Project of Çank?r? Karatekin University (MF200217B05) and the Scientific Research Project Management Unit of Çank?r? Karatekin University (ÇAKÜ-BAP).

摘要/Abstract

摘要： Chemical inhomogeneity of chemical vapor deposition (CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21% improvement in the standard deviation 2D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the 0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio (low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.

关键词: Graphene quality, Chemical vapor deposition (CVD), Multi-response optimization, TOPSIS based Taguchi method, Statistical comparison

Abstract: Chemical inhomogeneity of chemical vapor deposition (CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21% improvement in the standard deviation 2D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the 0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio (low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.

Key words: Graphene quality, Chemical vapor deposition (CVD), Multi-response optimization, TOPSIS based Taguchi method, Statistical comparison

Barış Şimşek. TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity[J]. Chinese Journal of Chemical Engineering, 2019, 27(3): 685-694.

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TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity

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