SCI和EI收录∣中国化工学会会刊

›› 2009, Vol. 17 ›› Issue (3): 419-426.

• CATALYSIS, KINETICS AND REACTORS • Previous Articles     Next Articles

Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2

YANG Yan1,2, ZHANG Weigang1   

  1. 1. State Key Lab of Multi-phase Complex Systems, Ins1. State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS, Beijing 100190, China;
    2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2008-07-05 Revised:2009-04-18 Online:2009-06-28 Published:2009-06-28
  • Supported by:
    Supported by the One Hundred Talents Program of Chinese Academy of Sciences

Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2

杨艳1,2, 张伟刚1   

  1. 1. State Key Lab of Multi-phase Complex Systems, Ins1. State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS, Beijing 100190, China;
    2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China
  • 通讯作者: ZHANG Weigang,E-mail:wgzhang@home.ipe.ac.cn
  • 基金资助:
    Supported by the One Hundred Talents Program of Chinese Academy of Sciences

Abstract: Silicon carbide was prepared from SiCl4-CH4-H2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 and SiCl2 formed from decomposition of SiCl4 and CH4 contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

Key words: chemical vapor deposition, SiC, kinetics, microstructure

摘要: Silicon carbide was prepared from SiCl4-CH4-H2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 and SiCl2 formed from decomposition of SiCl4 and CH4 contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

关键词: chemical vapor deposition, SiC, kinetics, microstructure