Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2

Abstract

Abstract: Silicon carbide was prepared from SiCl₄-CH₄-H₂ gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH₂Cl₂, SiHCl₃ and SiCl₂ formed from decomposition of SiCl₄ and CH₄ contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol^-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

Key words: chemical vapor deposition, SiC, kinetics, microstructure

摘要： Silicon carbide was prepared from SiCl₄-CH₄-H₂ gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH₂Cl₂, SiHCl₃ and SiCl₂ formed from decomposition of SiCl₄ and CH₄ contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol^-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

关键词: chemical vapor deposition, SiC, kinetics, microstructure

YANG Yan, ZHANG Weigang. Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂[J]. , 2009, 17(3): 419-426.

杨艳, 张伟刚. Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂[J]. , 2009, 17(3): 419-426.

References

1 Kim, H.S., Choi, D.J., “Effect of diluent gases on growth behavior and characteristics of chemically vapor deposited silicon carbide films”, J. Am. Ceram. Soc., 82, 331-337(1999).
2 Cagliostro, D.E., Riccitiello, S.R., “Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen(I) Silicon formation from chlorosilane”, J. Am. Ceram. Soc., 76(1), 39-48(1993).
3 Cagliostro, D.E., Riccitiello, S.R., “Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen(II) Silicon carbide formation from silicon and methane”, J. Am. Ceram. Soc., 76(1), 49-53(1993).
4 Cagliostro, D.E., Riccitiello, S.R., “Comparison of the pyrolysis products of dichlorodimethylsilane in the chemical vapor deposition of silicon carbide on silica in hydrogen or argon”, J. Am. Ceram. Soc., 77(10), 2721-2726(1994).
5 Takeuchi, T., Egashira, Y., Osawa, T., Komiyama, H., “A kinetic study of the chemical vapor deposition of silicon carbide from dichlorodimethylsilane precursors”, J. Electrochem. Soc., 145(4), 1277-1284(1998).
6 Papasouliotis, G.D., Sotirchos, S.V., “On the homogeneous chemistry of the thermal decomposition of methyltrichlorosilane:Thermodynamic analysis and kinetic modeling”, J. Electrochem. Soc., 141(6), 1599-1611(1994).
7 Besmann, T.M., Sheldon, B.W., Lowden, R.A., Stinton, D.P., “Vapor-phase fabrication and properties of continuous-filament ceramic composites”, Science, 253, 1104-1109(1991).
8 Sotirchos, S.V., Papasouliotis, G.D., “Experimental study of the atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane”, J. Mater. Res., 14, 3397-3409(1999).
9 Loumagne, F., Langlais, F., Naslain, R., “Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from CH₃SiCl₃/H₂ gas precursor”, J. Cryst. Growth, 155, 205-213(1995).
10 Loumagne, F., Langlais, F., Naslain, R., “Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from CH₃SiCl₃/H₂ gas precursor”, J. Cryst. Growth, 155, 198-204(1995).
11 Sone, H., Kaneko, T., Miyakawa, N., “In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane”, J. Cryst. Growth, 219, 245-252(2000).
12 Kaneko, T., Okuno, T., Yumoto, H., “Growth kinetics of silicon carbide CVD”, J. Cryst. Growth, 91(4), 599-604(1988).
13 Lu, Y.M., Leu, I.C., “Microstructural study of residual stress in chemically vapor deposited B-SiC”, Surface Coatings Technol., 124, 262-265(2000).
14 Vorobev, A.N., Karpov, S.Y., Zhmakin, A.I., Lovtsus, Y.N., “Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide”, J. Cryst. Growth, 211, 343-346(2000).
15 Reznik, B., Gerthsen, D., Zhang, W.G., Hüttinger, K.J., “Microstructure of SiC deposited from methyltrichlorosilane”, J. Eur. Ceram. Soc., 23, 1499-1508(2003).
16 Zhang, W.G., Hüttinger, K.J., “CVD of SiC from methyltrichlorosilane. Deposition rates”, Chem. Vap. Depos., 7(4), 167-172(2001).
17 Zhang, W.G., Hüttinger, K.J., “CVD of SiC from methyltrichlorosilane. Composition of the gas phase and the deposit”, Chem. Vap. Depos., 7(4), 173-181(2001)
18 Habuka, H., Watanabe, M., Nishida, M., Sekiguchi, T., “Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases”, Surface Coatings Technol., 201, 8961-8965(2007).
19 Jung, Y.G., Park, S.W., Choi, S.C., “Effect of CH₄ and H₂ on CVD of SiC and TiC possible fabrication of SiC/TiC/C FGM”, Mater. Lett., 30, 339-345(1997).
20 Hu, Z.J., Hüttinger, K.J., “Mechanisms of carbon deposition—A kinetic approach”, Carbon, 40(4), 624-8(2002).
21 Zheng, C.Q., Ran, J.G., New Inorganic Materials, Science Press, Beijing, 87-89(2003).(in Chinese)
22 Zhang, W.G., “Chemical vapor deposition of carbon”, Chemical Vapor Deposition—From Hydrocarbon to Carbon, Science Press, Beijing, 44-51(2007).(in Chinese)
23 Givargizou, E.J., Current Topic in Materials Science, North-Holland, New York, 56(1978).

[1]	Ming Liu, Ying Li, Rui Wang, Guoqiang Shao, Pengpeng Lv, Jun Li, Qingshan Zhu. Uniform deposition of ultra-thin TiO₂ film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration [J]. Chinese Journal of Chemical Engineering, 2023, 60(8): 99-107.
[2]	Xiaolin Guo, Zhaoyang Zhang, Pengfei Xing, Shuai Wang, Yibing Guo, Yanxin Zhuang. Kinetic mechanism of copper extraction from methylchlorosilane slurry residue using hydrogen peroxide as oxidant [J]. Chinese Journal of Chemical Engineering, 2023, 60(8): 228-234.
[3]	Xun Tao, Fan Zhou, Xinlei Yu, Songling Guo, Yunfei Gao, Lu Ding, Guangsuo Yu, Zhenghua Dai, Fuchen Wang. Effect of carbon dioxide on oxy-fuel combustion of hydrogen sulfide: An experimental and kinetic modeling [J]. Chinese Journal of Chemical Engineering, 2023, 59(7): 105-117.
[4]	Junyang Liu, Luming Wang, Yuhang Bian, Chunshan Li, Zengxi Li, Jie Li. Liquid-phase esterification of methacrylic acid with methanol catalyzed by cation-exchange resin in a fixed bed reactor: Experimental and kinetic studies [J]. Chinese Journal of Chemical Engineering, 2023, 58(6): 1-10.
[5]	Wei Wang, Romain Lemaire, Ammar Bensakhria, Denis Luart. Thermogravimetric analysis and kinetic modeling of the co-pyrolysis of a bituminous coal and poplar wood [J]. Chinese Journal of Chemical Engineering, 2023, 58(6): 53-68.
[6]	Bing Liu, Yingjiao Li, Moses Arowo, Guangwen Chu, Yong Luo, Liangliang Zhang, Haikui Zou, Baochang Sun. Sulfonation of 1, 4-diaminoanthraquinone leuco by chlorosulfonic acid: Kinetics and process intensification [J]. Chinese Journal of Chemical Engineering, 2023, 58(6): 163-169.
[7]	Weikai Ren, Runsong Dai, Ningde Jin. Modeling of liquid film thickness around Taylor bubbles rising in vertical stagnant and co-current slug flowing liquids [J]. Chinese Journal of Chemical Engineering, 2023, 58(6): 179-194.
[8]	Xinyu Liu, Hongliang Sheng, Song He, Chunhua Du, Yuansheng Ma, Chichi Ruan, Chunxiang He, Huaming Dai, Yajun Huang, Yuelei Pan. Insight into pyrolysis of hydrophobic silica aerogels: Kinetics, reaction mechanism and effect on the aerogels [J]. Chinese Journal of Chemical Engineering, 2023, 58(6): 266-281.
[9]	Guangyuan Chen, Tong Zhou, Meng Zhang, Zhongxiang Ding, Zhikun Zhou, Yuanhui Ji, Haiying Tang, Changsong Wang. Effects of heavy metal ions Cu²⁺/Pb²⁺/Zn²⁺ on kinetic rate constants of struvite crystallization [J]. Chinese Journal of Chemical Engineering, 2023, 57(5): 10-16.
[10]	Shujun Peng, Song Lei, Sisi Wen, Jian Xue, Haihui Wang. A Ruddlesden–Popper oxide as a carbon dioxide tolerant cathode for solid oxide fuel cells that operate at intermediate temperatures [J]. Chinese Journal of Chemical Engineering, 2023, 56(4): 25-32.
[11]	Tian Zhang, Qingshan Huang, Shujun Geng, Aqiang Chen, Yan Liu, Haidong Zhang. Impacts of solid physical properties on the performances of a slurry external airlift loop reactor integrating mixing and separation [J]. Chinese Journal of Chemical Engineering, 2023, 55(3): 1-12.
[12]	Zhihao Zhu, Ying Sun, Haijun Yu, Meng Li, Xingming Jie, Guodong Kang, Yiming Cao. Effect of polytetrafluoroethylene hollow fiber microstructure on formaldehyde carbonylation performance in membrane contactor [J]. Chinese Journal of Chemical Engineering, 2023, 55(3): 148-155.
[13]	Zhiwei Wang, Yu Zhang, Zhi Zhang, Daowei Zhou, Zhikai Cao, Yong Sha. Investigation on catalytic distillation for ethyl acetate production with different catalytic packing structures [J]. Chinese Journal of Chemical Engineering, 2023, 53(1): 63-72.
[14]	Tengjie Wang, Wenkai Li, Xuehui Ge, Ting Qiu, Xiaoda Wang. Kinetics measurement of ethylene-carbonate synthesis via a fast transesterification by microreactors [J]. Chinese Journal of Chemical Engineering, 2023, 53(1): 243-250.
[15]	Yingjie Song, Shuqi Zhong, Yingjiao Li, Kun Dong, Yong Luo, Guangwen Chu, Haikui Zou, Baochang Sun. Study on the catalytic degradation of sodium lignosulfonate to aromatic aldehydes over nano-CuO: Process optimization and reaction kinetics [J]. Chinese Journal of Chemical Engineering, 2023, 53(1): 300-309.

Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments