SCI和EI收录∣中国化工学会会刊

中国化学工程学报 ›› 2019, Vol. 27 ›› Issue (5): 1207-1211.DOI: 10.1016/j.cjche.2018.09.026

• Energy, Resources and Environmental Technology • 上一篇    下一篇

Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

Dongbo Xu1,2, Lili Li2, Weiqiang Fan2, Fagen Wang2, Hongye Bai2, Baodong Mao2, Weidong Shi2   

  1. 1 School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;
    2 School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, China
  • 收稿日期:2018-08-29 修回日期:2018-09-25 出版日期:2019-05-28 发布日期:2019-06-27
  • 通讯作者: Weidong Shi
  • 基金资助:
    Supported by the National Natural Science Foundation of China (21522603, 21477050, 21401082, 21503142, 21671083), Six Talent Peaks Project in Jiangsu Province (XCL-025), and the Chinese-German Cooperation Research Project (GZ1091), Postgraduate Research & Practice Innovation Program of Jiangsu Province (KYCX17_1774), and the Excellent Youth Foundation of Jiangsu Scientific Committee (BK20170526).

Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

Dongbo Xu1,2, Lili Li2, Weiqiang Fan2, Fagen Wang2, Hongye Bai2, Baodong Mao2, Weidong Shi2   

  1. 1 School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;
    2 School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, China
  • Received:2018-08-29 Revised:2018-09-25 Online:2019-05-28 Published:2019-06-27
  • Contact: Weidong Shi
  • Supported by:
    Supported by the National Natural Science Foundation of China (21522603, 21477050, 21401082, 21503142, 21671083), Six Talent Peaks Project in Jiangsu Province (XCL-025), and the Chinese-German Cooperation Research Project (GZ1091), Postgraduate Research & Practice Innovation Program of Jiangsu Province (KYCX17_1774), and the Excellent Youth Foundation of Jiangsu Scientific Committee (BK20170526).

摘要: Here we report the WO3 thin films on F-doped SnO2 conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO3 thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedance spectroscopy and incident photon to current conversion efficiency, respectively. The results showed that the WO3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm-2 at 1.23 V versus RHE.

关键词: WO3 thin films, Dip film-drawing, Photoelectrochemical, Thicknesses, Large-scale

Abstract: Here we report the WO3 thin films on F-doped SnO2 conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO3 thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedance spectroscopy and incident photon to current conversion efficiency, respectively. The results showed that the WO3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm-2 at 1.23 V versus RHE.

Key words: WO3 thin films, Dip film-drawing, Photoelectrochemical, Thicknesses, Large-scale