Hydrogenation of Silicon Tetrachloride in Microwave Plasma

doi:10.1016/S1004-9541(14)60025-2

Chinese Journal of Chemical Engineering ›› 2014, Vol. 22 ›› Issue (2): 227-233.DOI: 10.1016/S1004-9541(14)60025-2

Hydrogenation of Silicon Tetrachloride in Microwave Plasma

卢振西^1,2, 张伟刚¹

1 State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China;
2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2012-02-09 修回日期:2013-03-16 出版日期:2014-02-05 发布日期:2014-01-28
通讯作者: ZHANG Weigang

Hydrogenation of Silicon Tetrachloride in Microwave Plasma

LU Zhenxi^1,2, ZHANG Weigang¹

1 State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China;
2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received:2012-02-09 Revised:2013-03-16 Online:2014-02-05 Published:2014-01-28
Contact: ZHANG Weigang

摘要/Abstract

摘要： This study investigated the hydrogenation of silicon tetrachloride (SiCl₄) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H₂) plasma was introduced to produce a non-thermodynamic equilibrium activation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed "Reactive Temperature" in this study. Thus, the hydrogenation of SiCl₄ in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl₃). The effects of SiCl₄/Ar and H₂/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the optimum experimental parameters. The highest hydrogenation conversion ratio was produced at a H₂/SiCl₄ molar ratio of 1, with mixtures of SiCl₄ and H₂ to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl₄, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H₂ and SiCl₄) molar energy input was about 350 kJ·mol^-1.

关键词: hydrogenation, silicon tetrachloride, non-thermodynamic equilibrium plasma, equilibrium constant, plasma temperature

Abstract: This study investigated the hydrogenation of silicon tetrachloride (SiCl₄) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H₂) plasma was introduced to produce a non-thermodynamic equilibrium activation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed "Reactive Temperature" in this study. Thus, the hydrogenation of SiCl₄ in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl₃). The effects of SiCl₄/Ar and H₂/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the optimum experimental parameters. The highest hydrogenation conversion ratio was produced at a H₂/SiCl₄ molar ratio of 1, with mixtures of SiCl₄ and H₂ to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl₄, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H₂ and SiCl₄) molar energy input was about 350 kJ·mol^-1.

Key words: hydrogenation, silicon tetrachloride, non-thermodynamic equilibrium plasma, equilibrium constant, plasma temperature

卢振西, 张伟刚. Hydrogenation of Silicon Tetrachloride in Microwave Plasma[J]. Chinese Journal of Chemical Engineering, 2014, 22(2): 227-233.

LU Zhenxi, ZHANG Weigang. Hydrogenation of Silicon Tetrachloride in Microwave Plasma[J]. Chin.J.Chem.Eng., 2014, 22(2): 227-233.

参考文献

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Hydrogenation of Silicon Tetrachloride in Microwave Plasma

Hydrogenation of Silicon Tetrachloride in Microwave Plasma

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